Trina Solar Limited (Changzhou, China) on December 19th, 2016 announced that its State Key Laboratory of PV Science and Technology of China (SKL PVST), set a new world conversion efficiency record of 22.61% for a high-efficiency p-type mono-crystalline silicon (c-Si) solar photovoltaic cell.
The record-breaking solar cell was fabricated on a large-sized boron-doped Cz-Si substrate with a low-cost industrial process of advanced PERC (Passivated Emitter and Rear Cell) technology that integrates back surface passivation, front surface advanced passivation and anti-LID (Light Induced Degradation) technologies.
The 243.23 cm2 solar cell reached a total-area efficiency of 22.61%. This result has been independently confirmed by the Fraunhofer ISE CalLab in Germany.
Today, Trina Solar announces that it has broken its previous efficiency record by about a half percentage point, reaching the highest efficiency level to date for a PERC cell fabricated with a low-cost industrial process on a large-area p-type mono-crystalline substrate.
“Over the last few years, our R&D team has managed to continuously improve the efficiency of our mono- and multi-crystalline silicon PERC solar cells, pushing the limits of technology and surpassing our previous records,” said Dr. Pierre Verlinden, Vice-President and Chief Scientist of Trina Solar.
“We want to demonstrate all the possibilities of PERC technology on an industrial scale, and to approach as close as possible to the 25% efficiency level that was achieved by solar researchers at The University of New South Wales in the laboratory more than 17 years ago.”